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      Hot-Electron Spectroscopy of GaAs

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      Physical Review Letters
      American Physical Society (APS)

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          Planar-doped barriers in GaAs by molecular beam epitaxy

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            Electron scattering interaction with coupled plasmon-polar-phonon modes in degenerate semiconductors

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              Charge injection over triangular barriers in unipolar semiconductor structures

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                Author and article information

                Journal
                PRLTAO
                Physical Review Letters
                Phys. Rev. Lett.
                American Physical Society (APS)
                0031-9007
                April 1985
                April 8 1985
                : 54
                : 14
                : 1570-1572
                Article
                10.1103/PhysRevLett.54.1570
                85f6ce38-f38d-4913-bbec-502bf2b8f108
                © 1985

                http://link.aps.org/licenses/aps-default-license

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