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      Development of bulk GaAs room temperature radiation detectors

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          Surface States and Rectification at a Metal Semi-Conductor Contact

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            Compensation mechanisms in GaAs

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              A review of the theory and technology for ohmic contacts to group III–V compound semiconductors

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                Author and article information

                Journal
                IEEE Transactions on Nuclear Science
                IEEE Trans. Nucl. Sci.
                Institute of Electrical and Electronics Engineers (IEEE)
                00189499
                Oct. 1992
                : 39
                : 5
                : 1226-1236
                Article
                10.1109/23.173182
                85fffe62-deb3-43bd-bcc2-c37448121415
                © 1992
                History

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