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      Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy

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          Journal
          Microelectronic Engineering
          Microelectronic Engineering
          Elsevier BV
          01679317
          November 2015
          November 2015
          : 147
          : 306-309
          Article
          10.1016/j.mee.2015.04.105
          86436c86-715e-44fc-913b-81ecfdd31855
          © 2015

          https://www.elsevier.com/tdm/userlicense/1.0/

          https://www.elsevier.com/open-access/userlicense/1.0/

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