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      Nanomaterials‐based gas sensors of SF 6 decomposed species for evaluating the operation status of high‐voltage insulation devices

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          Electric Field Effect in Atomically Thin Carbon Films

          We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.
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            Helical microtubules of graphitic carbon

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              Single-layer MoS2 transistors.

              Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
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                Author and article information

                Contributors
                Journal
                High Voltage
                High Voltage
                Institution of Engineering and Technology (IET)
                2397-7264
                2397-7264
                December 2019
                December 06 2019
                December 2019
                : 4
                : 4
                : 242-258
                Affiliations
                [1 ]State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing UniversityChongqing400044People's Republic of China
                [2 ]School of Electrical and Computer Engineering, Georgia Institute of TechnologyAtlanta30332GAUSA
                [3 ]School of Electrical and Electronic Engineering, Hubei University of TechnologyHubei430068People's Republic of China
                Article
                10.1049/hve.2019.0130
                86d70776-d129-4041-ba32-b6d059e2b13b
                © 2019

                http://creativecommons.org/licenses/by/3.0/

                http://doi.wiley.com/10.1002/tdm_license_1.1

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