Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Abstract

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of \(2e^2/h\). Investigating the ZBP evolution by sweeping various gate voltages and magnetic field, we find a transition between a zero-bias peak and a zero-bias dip while the zero-bias conductance sticks close to \(2e^2/h\). We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.