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      Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

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      Journal of Applied Physics
      AIP Publishing

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          Author and article information

          Journal
          JAPIAU
          Journal of Applied Physics
          J. Appl. Phys.
          AIP Publishing
          00218979
          2003
          2003
          : 94
          : 8
          : 5408
          Article
          10.1063/1.1609650
          878e376d-8c8f-4eda-be90-860d4fa743dd
          © 2003
          History

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