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      Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

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          Abstract

          The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 10 7 cm −2 to 2.6 × 10 7 cm −2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.

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          Most cited references 10

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          High dislocation densities in high efficiency GaN‐based light‐emitting diodes

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            Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

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              InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

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                Author and article information

                Contributors
                Journal
                Nanoscale Res Lett
                Nanoscale Res Lett
                Nanoscale Research Letters
                Springer
                1931-7573
                1556-276X
                2014
                16 September 2014
                : 9
                : 1
                : 505
                Affiliations
                [1 ]Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan
                [2 ]Department of Electrophysics, National Chiao Tung University, Hsin-Chu 30010, Taiwan
                [3 ]Microelectronic and Information System Research Center, National Chiao Tung University, Hsin-Chu 30010, Taiwan
                [4 ]Advanced Optoelectronic Technology Incorporation, Hsinchu County 303, Taiwan
                [5 ]Optorun Co., Ltd., Saitama-ken 350-0801, Japan
                [6 ]Department of Electronic Engineering, Chang-Gung University, Taoyuan 333, Taiwan
                Article
                1556-276X-9-505
                10.1186/1556-276X-9-505
                4174280
                Copyright © 2014 Lee et al.; licensee Springer.

                This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.

                Categories
                Nano Express

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