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      The resonant gate transistor

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          A Unipolar "Field-Effect" Transistor

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            The silicon insulated-gate field-effect transistor

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              Stabilization of Silicon Surfaces by Thermally Grown Oxides*

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                Author and article information

                Journal
                IEEE Transactions on Electron Devices
                IEEE Trans. Electron Devices
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9383
                March 1967
                March 1967
                : 14
                : 3
                : 117-133
                Article
                10.1109/T-ED.1967.15912
                891b50be-fa97-4c99-a7a8-166977f22de0
                © 1967
                History

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