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MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Jia Guo ,
Guowang Li ,
Faiza Faria ,
Yu Cao ,
Ronghua Wang ,
Jai Verma ,
Xiang Gao ,
Shiping Guo ,
Edward Beam ,
Andrew Ketterson ,
Michael Schuette ,
Paul Saunier ,
Mark Wistey ,
Debdeep Jena ,
Huili Xing
April 2012
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Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth
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