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      Creep turns linear in narrow ferromagnetic nanostrips

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          Abstract

          The motion of domain walls in magnetic materials is a typical example of a creep process, usually characterised by a stretched exponential velocity-force relation. By performing large-scale micromagnetic simulations, and analyzing an extended 1D model which takes the effects of finite temperatures and material defects into account, we show that this creep scaling law breaks down in sufficiently narrow ferromagnetic strips. Our analysis of current-driven transverse domain wall motion in disordered Permalloy nanostrips reveals instead a creep regime with a linear dependence of the domain wall velocity on the applied field or current density. This originates from the essentially point-like nature of domain walls moving in narrow, line- like disordered nanostrips. An analogous linear relation is found also by analyzing existing experimental data on field-driven domain wall motion in perpendicularly magnetised media.

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          Most cited references16

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            Magnetic domain-wall logic.

            "Spintronics," in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.
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              Faster magnetic walls in rough wires.

              In some magnetic devices that have been proposed, the information is transmitted along a magnetic wire of submicrometre width by domain wall (DW) motion. The speed of the device is obviously linked to the DW velocity, and measured values up to 1 km x s(-1) have been reported in moderate fields. Although such velocities were already reached in orthoferrite crystal films with a high anisotropy, the surprise came from their observation in the low-anisotropy permalloy. We have studied, by numerical simulation, the DW propagation in such samples, and observed a very counter-intuitive behaviour. For perfect samples (no edge roughness), the calculated velocity increased with field up to a threshold, beyond which it abruptly decreased--a well-known phenomenon. However, for rough strip edges, the velocity breakdown was found to be suppressed. We explain this phenomenon, and propose that roughness should rather be engineered than avoided when fabricating nanostructures for DW propagation.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                04 February 2016
                2016
                : 6
                : 20472
                Affiliations
                [1 ]Department of Solid State Sciences, Ghent University , Krijgslaan 281/S1, 9000 Ghent, Belgium
                [2 ]Department of Electrical Energy, Systems and Automation, Ghent University , 9000 Ghent, Belgium
                [3 ]COMP Centre of Excellence and Helsinki Institute of Physics, Department of Applied Physics, Aalto University , P.O. Box 11100, FIN-00076 Aalto, Espoo, Finland
                [4 ]Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy
                [5 ]ISI Foundation , Via Alassio 11/c, 10126, Torino, Italy
                Author notes
                Article
                srep20472
                10.1038/srep20472
                4740894
                26843125
                8a55178c-b2c7-420e-b8e9-3f4ab7227d4c
                Copyright © 2016, Macmillan Publishers Limited

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 06 October 2015
                : 04 January 2016
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