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      A capacitance standard based on counting electrons

      1 , , ,
      Science (New York, N.Y.)

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          Abstract

          A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change DeltaV was measured. Repeated measurements of C = Ne/DeltaV with this method have a relative standard deviation of 0.3 x 10(-6). This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.

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          Author and article information

          Journal
          Science
          Science (New York, N.Y.)
          1095-9203
          0036-8075
          Sep 10 1999
          : 285
          : 5434
          Affiliations
          [1 ] National Institute of Standards and Technology, Boulder, CO 80303, USA. National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
          Article
          7817
          10481001
          8ab35db8-fb23-43a6-b88d-5c1b93d96c23
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