High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Mishra, U.K.; DenBaars, S.P.; Keller, S.; McCarthy, L.; Chakraborty, A.; Dora, Y.

doi:10.1109/LED.2006.881020

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Author(s): Y. Dora , A. Chakraborty , L. Mccarthy , S. Keller , S.P. Denbaars , U.K. Mishra

Publication date (Print): September 2006

Journal: IEEE Electron Device Letters

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

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Most cited references 9

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30-W/mm GaN HEMTs by Field Plate Optimization

A. Saxler, P Parikh, U.K. Mishra … (2004)

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Obtaining the specific contact resistance from transmission line model measurements

G.K. Reeves, H.B. Harrison (1982)

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High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Y Takada, M Kuraguchi, K Tsuda … (2003)

0 comments Cited 62 times – based on 0 reviews      Review now

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Journal

Title: IEEE Electron Device Letters

Abbreviated Title: IEEE Electron Device Lett.

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

ISSN (Print): 0741-3106

Publication date Created: September 2006

Publication date (Print): September 2006

Volume: 27

Issue: 9

Pages: 713-715

Article

DOI: 10.1109/LED.2006.881020

SO-VID: 8b8c625b-8e1f-4565-9b7a-e1b142208c58

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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Most cited references 9

30-W/mm GaN HEMTs by Field Plate Optimization

Obtaining the specific contact resistance from transmission line model measurements

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

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