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      Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs

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          Abstract

          MnAs exhibits a first-order phase transition from a ferromagnetic, high-spin metal NiAs-type hexagonal phase to a paramagnetic, lower-spin insulator MnP-type orthorhombic phase at T_C = 313 K. Here, we report the results of neutron diffraction experiments showing that an external magnetic field, B, stabilizes the hexagonal metallic phase above T_C. The phase transformation is reversible and constitutes the first demonstration of a bond-breaking transition induced by a magnetic field. At 322 K the hexagonal structure is restored for B > 4 tesla. The field-induced phase transition is accompanied by an enhanced magnetoresistance of about 17 % at 310 K. We discuss the origin of this phenomenon, which appears to be similar to that of the colossal magnetoresistance response observed in some members of the manganese perovskite family.

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          Most cited references25

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          Thousandfold change in resistivity in magnetoresistive la-ca-mn-o films.

          A negative isotropic magnetoresistance effect more than three orders of magnitude larger than the typical giant magnetoresistance of some superlattice films has been observed in thin oxide films of perovskite-like La(0.67)Ca(0.33)MnOx. Epitaxial films that are grown on LaAIO(3) substrates by laser ablation and suitably heat treated exhibit magnetoresistance values as high as 127,000 percent near 77 kelvin and approximately 1300 percent near room temperature. Such a phenomenon could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized. Possible mechanisms for the observed effect are discussed.
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            Mixed-valence manganites

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              Phase separation scenario for manganese oxides and related materials

              Recent computational studies of models for manganese oxides have revealed a rich phase diagram, which was not anticipated in early calculations in this context performed in the 1950s and 1960s. In particular, the transition between the antiferromagnetic insulator state of the hole-undoped limit and the ferromagnetic metal at finite hole density was found to occur through a mixed-phase process. When extended Coulomb interactions are included, a microscopically charged inhomogeneous state should be stabilized. These phase separation tendencies, also present at low electronic densities, influence the properties of the ferromagnetic region by increasing charge fluctuations. Experimental data reviewed here by applying several techniques for manganites and other materials are consistent with this scenario. Similarities with results previously discussed in the context of cuprates are clear from this analysis, although the phase segregation tendencies in manganites appear stronger.
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                Author and article information

                Journal
                25 January 2002
                Article
                10.1103/PhysRevLett.90.097203
                cond-mat/0201478
                8bd2e94f-cbc6-4212-97d4-c9cdcfc2a2ac
                History
                Custom metadata
                4 Figures
                cond-mat.mtrl-sci

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