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      Effects of moisture and redox reactions in VCM and ECM resistive switching memories

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      Journal of Physics D: Applied Physics

      IOP Publishing

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          Nanoionics-based resistive switching memories.

          Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.
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            Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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              Memristive devices for computing.

              Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.
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                Author and article information

                Journal
                Journal of Physics D: Applied Physics
                J. Phys. D: Appl. Phys.
                IOP Publishing
                0022-3727
                1361-6463
                October 17 2018
                October 17 2018
                August 21 2018
                : 51
                : 41
                : 413001
                Article
                10.1088/1361-6463/aad581
                © 2018

                http://iopscience.iop.org/info/page/text-and-data-mining

                http://iopscience.iop.org/page/copyright

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