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Abstract
Amplification of the photocurrent in heterostructures of silicon dioxide films containing
cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in
magnetic field in the avalanche regime. While the avalanche process is suppressed
by the magnetic field and the current decreases, for photon energy E greater than
the GaAs bandgap energy the photocurrent significantly increases. The amplification
reaches 9.5 for E = 1.50 eV. The effect of the photocurrent amplification is explained
by the spin-dependent recombination process at deep impurity centers in GaAs.