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      Generation of misfit dislocations in semiconductors

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      Journal of Applied Physics
      AIP Publishing

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          Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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            Defects associated with the accommodation of misfit between crystals

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              Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                December 1987
                December 1987
                : 62
                : 11
                : 4413-4420
                Article
                10.1063/1.339078
                8e0a71e8-ebab-4e65-8727-6e2896106083
                © 1987
                History

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