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Abstract
3D Rashba materials can be a leading player in spin-related novel phenomena, ranging
from the metallic extreme (unconventional superconductivity) to the transport intermediate
(spin Hall effects) to the novel insulating variant (3D topological insulating states).
As the essential backbone for both fundamental and applied research of such a 3D Rashba
material, this study established the growth of sizeable single crystals of a candidate
compound BiTeI with adjusted carrier concentrations. Three techniques (standard vertical
Bridgman, modified horizontal Bridgman, and vapour transport) were employed, and BiTeI
crystals (> 1 * 1 * 0.2 mm3) with fundamentally different electronic states from metallic
to insulating were successfully grown by the chosen techniques. The 3D Rashba electronic
states, including the Fermi surface topology, for the corresponding carrier concentrations
of the obtained BiTeI crystals were revealed by relativistic first-principles calculations.