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      Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

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      Journal of Applied Physics
      AIP Publishing

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          Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

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            Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

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              Dislocation mediated surface morphology of GaN

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                August 15 2000
                August 15 2000
                : 88
                : 4
                : 1855-1860
                Article
                10.1063/1.1305830
                8ff96cec-d464-4d34-95d1-ec635e40b5ed
                © 2000
                History

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