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      Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP

      Author(s): , , ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Temperature dependence of the energy gap in semiconductors

          Y.P. Varshni (1967)
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            Schottky-Barrier Electroreflectance: Application to GaAs

            A Studna, D. Aspnes (1973)
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              Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44

              K.‐H. Goetz, H. Jürgensen, J. Selders … (1983)
              Article 0 comments Cited 126 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: March 26 1990
                Publication date (Print): March 26 1990
                Volume: 56
                Issue: 13
                Pages: 1269-1271
                Article
                DOI: 10.1063/1.102533
                SO-VID: 9079daf2-d2cc-4d26-a759-4f73eb7fea18
                Copyright © © 1990
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