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      Ultrawide strain-tuning of light emission from InGaAs nanomembranes

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          A Numerical Fourier-analysis Method for the Correction of Widths and Shapes of Lines on X-ray Powder Photographs

          A. Stokes (1948)
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            Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress.

            We study the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators. With increasing compression, the emission blueshifts and the binding energies of the positive trion (X+) and biexciton (XX) relative to the neutral exciton (X) show a monotonic increase. This phenomenon is mainly ascribed to changes in electron and hole localization and it provides a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering" scheme.
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              Direct-bandgap light-emitting germanium in tensilely strained nanomembranes.

              Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic active devices, including diode lasers, thereby significantly limiting our ability to integrate electronic and photonic functionalities at the chip level. Here we show that Ge nanomembranes (i.e., single-crystal sheets no more than a few tens of nanometers thick) can be used to overcome this materials limitation. Theoretical studies have predicted that tensile strain in Ge lowers the direct energy bandgap relative to the indirect one. We demonstrate that mechanically stressed nanomembranes allow for the introduction of sufficient biaxial tensile strain to transform Ge into a direct-bandgap material with strongly enhanced light-emission efficiency, capable of supporting population inversion as required for providing optical gain.
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                Author and article information

                Journal
                Applied Physics Letters
                Appl. Phys. Lett.
                AIP Publishing
                0003-6951
                1077-3118
                November 12 2018
                November 12 2018
                : 113
                : 20
                : 201105
                Affiliations
                [1 ]Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215, USA
                [2 ]Department of Materials Science and Engineering, University of Wisconsin–Madison, 1509 University Avenue, Madison, Wisconsin 53706, USA
                [3 ]Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
                Article
                10.1063/1.5055869
                913c8794-65ca-4efe-b6db-c0fde5e64015
                © 2018
                History

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