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      Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Journal of Applied Physics
      Publisher: AIP Publishing

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          Valence-Band Parameters in Cubic Semiconductors

          P. Lawaetz (1971)
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            Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals

            C Kittel, G Dresselhaus, A. F. Kip (1955)
            Article 0 comments Cited 394 times – based on 0 reviews     Review now
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              Theoretical calculations of heterojunction discontinuities in the Si/Ge system

              Chris Van de Walle, Richard M. Martin (1986)
              Article 0 comments Cited 393 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Journal of Applied Physics
                Abbreviated Title: Journal of Applied Physics
                Publisher: AIP Publishing
                ISSN (Print): 0021-8979
                ISSN (Electronic): 1089-7550
                Publication date Created: August 15 1996
                Publication date (Print): August 15 1996
                Volume: 80
                Issue: 4
                Pages: 2234-2252
                Article
                DOI: 10.1063/1.363052
                SO-VID: 91e046f2-7acf-4206-8c30-c733d68b1e62
                Copyright © © 1996
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