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      InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength

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          Most cited references 28

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          Ultimate low-loss single-mode fibre at 1.55 μm

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            Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers

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              The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption

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                Author and article information

                Journal
                IEEE Journal of Quantum Electronics
                IEEE J. Quantum Electron.
                Institute of Electrical and Electronics Engineers (IEEE)
                0018-9197
                August 1984
                August 1984
                : 20
                : 8
                : 866-874
                Article
                10.1109/JQE.1984.1072495
                © 1984
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