13
views
0
recommends
+1 Recommend
0 collections
    0
    shares
      • Record: found
      • Abstract: found
      • Article: found
      Is Open Access

      Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators

      Preprint
      , ,

      Read this article at

      Bookmark
          There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

          Abstract

          Identifying topological insulators and semimetals often focuses on their surface states, using spectroscopic methods such as the angle-resolved photoemission spectroscopy or scanning tunneling microscopy. In contrast, studying the topological properties of topological insulators from their bulk-state transport is more accessible in most labs but seldom addressed. We show that, in the quantum limit of a topological insulator, the backscattering between the only two states on the Fermi surface of the lowest Landau band can be forbidden, at a critical magnetic field. The conductivity is determined solely by the backscattering between the two states, leading to a resistance dip that may serve as a signature for topological insulator phases. More importantly, this forbidden backscattering mechanism for the resistance dip is irrelevant to details of disorder scattering. Our theory can be applied to re-visit the experiments on Pb\(_{1-x}\)Sn\(_x\)Se, ZrTe\(_5\), Ag\(_2\)Te families, and will be particularly useful for controversial small-gap materials at the boundary between topological insulator and normal insulator.

          Related collections

          Most cited references12

          • Record: found
          • Abstract: not found
          • Article: not found

          Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

            Bookmark
            • Record: found
            • Abstract: found
            • Article: found
            Is Open Access

            Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

            The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
              Bookmark
              • Record: found
              • Abstract: found
              • Article: found
              Is Open Access

              Quantized Anomalous Hall Effect in Magnetic Topological Insulators

              The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin Hall effect have been discovered in recent years. However, the quantized anomalous Hall (QAH) effect has not yet been realized experimentally. In a QAH insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically non-trivial electronic structure, leading to the quantized Hall effect without any external magnetic field. In this work, based on state-of-art first principles calculations, we predict that the tetradymite semiconductors Bi\(_2\)Te\(_3\), Bi\(_2\)Se\(_3\), and Sb\(_2\)Te\(_3\) form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in sharp contrast to conventional dilute magnetic semiconductor where free carriers are necessary to mediate the magnetic coupling. Magnetic order in two-dimensional thin films gives rise to a topological electronic structure characterized by a finite Chern number, with quantized Hall conductance \(e^{2}/h\). Experimental realization of the long sought-after QAH insulator state could enable robust dissipationless charge transport at room temperature.
                Bookmark

                Author and article information

                Journal
                10 January 2018
                Article
                1801.03617
                941965d1-248b-4adf-955b-a10e357f70de

                http://arxiv.org/licenses/nonexclusive-distrib/1.0/

                History
                Custom metadata
                5 pages, 4 figures, with a Supplemental Material. Comments are welcome
                cond-mat.mes-hall cond-mat.mtrl-sci

                Comments

                Comment on this article