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      Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

      Author(s): , ,
      Publication date (Print):
      Journal: Physical Review B
      Publisher: American Physical Society (APS)

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          Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

          N. El‐Zein, N. Holonyak, A. R. Sugg … (1990)
          Article 0 comments Cited 195 times – based on 0 reviews     Review now
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            Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces

            Hideki Hasegawa (1986)
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              On the nature of oxides on InP surfaces

              G. Hollinger, Y Robach, E. Bergignat … (1985)
              Article 0 comments Cited 39 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Journal ID (publisher-id): PRBMDO
                Title: Physical Review B
                Abbreviated Title: Phys. Rev. B
                Publisher: American Physical Society (APS)
                ISSN (Print): 0163-1829
                ISSN (Electronic): 1095-3795
                Publication date Created: April 1994
                Publication date (Print): April 15 1994
                Volume: 49
                Issue: 16
                Pages: 11159-11167
                Article
                DOI: 10.1103/PhysRevB.49.11159
                SO-VID: 957e4aeb-df37-46ab-b28b-30e098473330
                Copyright © © 1994
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                http://link.aps.org/licenses/aps-default-license

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