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Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing
G.D. Wilk, M.L. Green, M.-Y. Ho, B.W. Busch, T.W. Sorsch, F.P. Klemens, B. Brijs, R.B. van Dover, A. Kornblit, T Gustafsson, E. Garfunkel, S. Hillenius, D Monroe, P. Kalavade, J.M. Hergenrother
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