Electronic structure of the$ {\mathrm{CaF}}_{2}$/Si(111) interface

McFeely, F. R.; Morar, J. F.; Yarmoff, J A; Rieger, D; Himpsel, F J; Karlsson, U. O.

doi:10.1103/PhysRevB.34.7295

Record: found
Abstract: not found
Article: not found

Electronic structure of the${\mathrm{CaF}}_{2}$/Si(111) interface

Author(s): D. Rieger , F. J. Himpsel , U. O. Karlsson , F. R. McFeely , J. F. Morar , J. A. Yarmoff

Publication date (Print): November 15 1986

Journal: Physical Review B

Publisher: American Physical Society (APS)

Read this article at

ScienceOpenPublisher

Bookmark

There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.

Related collections

Most cited references 54

Record: found
Abstract: not found
Article: not found

Geometry-DependentSi(2p)Surface Core-Level Excitations for Si(111) and Si(100) Surfaces

P. Heimann, T. -C. Chiang, D. E. Eastman … (1980)

0 comments Cited 122 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Probing the transition layer at the SiO2‐Si interface using core level photoemission

G. Hollinger, F Himpsel (1984)

0 comments Cited 114 times – based on 0 reviews      Review now

Bookmark

Record: found
Abstract: not found
Article: not found

Chemical shifts of Auger lines, and the Auger parameter

C D Wagner (1975)

0 comments Cited 101 times – based on 0 reviews      Review now

Bookmark

All references

Author and article information

Journal

Journal ID (publisher-id): PRBMDO

Title: Physical Review B

Abbreviated Title: Phys. Rev. B

Publisher: American Physical Society (APS)

ISSN (Print): 0163-1829

Publication date Created: November 1986

Publication date (Print): November 15 1986

Volume: 34

Issue: 10

Pages: 7295-7306

Article

DOI: 10.1103/PhysRevB.34.7295

SO-VID: 95fa4394-34ca-4521-9237-eaf15daee5bc

License:

http://link.aps.org/licenses/aps-default-license

History

Data availability:

Electronic structure of the\({\mathrm{CaF}}_{2}\)/Si(111) interface

Read this article at

Related collections

Electronic Workshops in Computing (eWiC)

Most cited references 54

Geometry-DependentSi(2p)Surface Core-Level Excitations for Si(111) and Si(100) Surfaces

Probing the transition layer at the SiO2‐Si interface using core level photoemission

Chemical shifts of Auger lines, and the Auger parameter

Author and article information

Journal

Article

History

Comments

Comment on this article

Similar content 3,396

Cited by 39

Most referenced authors 316