Insight into the skew-scattering mechanism of the spin Hall effect:
  potential scattering versus spin-orbit scattering

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Abstract

We present a detailed analysis of the skew-scattering contribution to the spin Hall conductivity using an extended version of the resonant scattering model of Fert and Levy [Phys. Rev. Lett. {\bf 106}, 157208 (2011)]. For \(5d\) impurities in a Cu host, the proposed phase shift model reproduces the corresponding first-principles calculations. Crucial for that agreement is the consideration of two scattering channels related to \(p\) and \(d\) impurity states, since the discussed mechanism is governed by a subtle interplay between the spin-orbit and potential scattering in both angular-momentum channels. It is shown that the potential scattering strength plays a decisive role for the magnitude of the spin Hall conductivity.

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Is Open Access

Spin torque switching with the giant spin Hall effect of tantalum

R A Buhrman, D C Ralph, H Tseng … (2012)

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.