The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values, whereas the current distribution in junctions with different densities resembles caustics in optics. This finding can be utilized in the engineering of electronic lenses and focused beam-splitters using gate-controlled \textit{n-p-n} junctions in graphene-based transistors.