Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

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Journal

Journal ID (publisher-id): JJAP

Title: Japanese Journal of Applied Physics

Abbreviated Title: Jpn. J. Appl. Phys.

Publisher: Japan Society of Applied Physics

ISSN (Print): 0021-4922

Publication date Created: October 20 1986

Publication date (Print): October 20 1986

Volume: 25

Issue: Part 2, No. 10

Pages: L868-L870

Article

DOI: 10.1143/JJAP.25.L868

SO-VID: 96f0b013-71d2-41bc-9ab5-916f377c0e33

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Self URI (article page): http://stacks.iop.org/1347-4065/25/L868

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