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      Stable, efficient, and all-solution-processed quantum dot light-emitting diodes with double-sided metal oxide nanoparticle charge transport layers.

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          Abstract

          An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc oxide (ZnO) NPs as the hole and electron transport layers, respectively. Except for the electrodes, all other layers are deposited by a simple spin-coating method. The resulting MO NP-based QLEDs show excellent device performance, with a peak luminance of 21300 cd/m(2) at the emission wavelength of 516 nm, a maximal current efficiency of 4.4 cd/A, and a low turn-on voltage of 3 V. More importantly, with the efficient design of the device architecture, these devices exhibit a significant improvement in device stability and the operational lifetime of 95 h measured at room temperature can be almost 20-fold longer than that of the standard device.

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          Author and article information

          Journal
          ACS Appl Mater Interfaces
          ACS applied materials & interfaces
          American Chemical Society (ACS)
          1944-8252
          1944-8244
          Jan 08 2014
          : 6
          : 1
          Affiliations
          [1 ] LUMINOUS! Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, ‡School of Physical and Mathematical Sciences, and §School of Mechanical and Aerospace Engineering, Nanyang Technological University , Nanyang Avenue, Singapore 639798.
          Article
          10.1021/am404540z
          24313560
          97002728-72a9-47ce-986b-c1a6a07adb85
          History

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