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      Antiferromagnetic spintronics

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          Magnetic domain-wall racetrack memory.

          Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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            A Mechanism of Magnetic Hysteresis in Heterogeneous Alloys

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              Exchange bias

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                Author and article information

                Journal
                RMPHAT
                Reviews of Modern Physics
                Rev. Mod. Phys.
                American Physical Society (APS)
                0034-6861
                1539-0756
                February 2018
                February 15 2018
                : 90
                : 1
                Article
                10.1103/RevModPhys.90.015005
                9799404e-6cce-48e6-88de-c7993ad8a80a
                © 2018

                https://link.aps.org/licenses/aps-default-license

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