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      On the Electrical Characterization of High- ĸ Dielectrics

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          High-κ gate dielectrics: Current status and materials properties considerations

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            A reliable approach to charge-pumping measurements in MOS transistors

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              Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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                Author and article information

                Journal
                applab
                MRS Bulletin
                MRS Bull.
                Cambridge University Press (CUP)
                0883-7694
                1938-1425
                March 2002
                January 31 2011
                March 2002
                : 27
                : 03
                : 222-225
                10.1557/mrs2002.75
                © 2002

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