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      Absence of13C incorporation in13CCl4‐doped InP grown by metalorganic chemical vapor deposition

      Author(s): , , ,
      Publication date Created:
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      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

          G. Scilla, R. Potemski, P.‐J. Wang … (1988)
          Article 0 comments Cited 52 times – based on 0 reviews     Review now
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            Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

            J Walker, R. Malik, R. Nottenberg … (1988)
            Article 0 comments Cited 46 times – based on 0 reviews     Review now
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              Carbon diffusion in undoped,n‐type, andp‐type GaAs

              B. Cunningham, L. Guido, G. Stillman … (1989)
              Article 0 comments Cited 42 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: April 30 1990
                Publication date (Print): April 30 1990
                Volume: 56
                Issue: 18
                Pages: 1760-1762
                Article
                DOI: 10.1063/1.103092
                SO-VID: 9a689af6-d120-41f5-a9c1-a141e273bc02
                Copyright statement: © 1990
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                Self URI (article page): http://aip.scitation.org/doi/10.1063/1.103092

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