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Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy

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      Abstract

      An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For GexSi1 − x-nanoislands obtained by MBE of Ge on Si-substrate gigantic interdiffusion mixing takes place both in the open and capped nanostructures. Lateral distributions of the elemental composition as well as concentration-depth profiles were recorded. 3D distribution of the elemental composition in the d-cluster bulk was obtained using the interpolation approach by lateral composition distributions in its several cross sections and concentration-depth profile. It was shown that there is a germanium core in the nanoislands of both nanostructure types, which even penetrates the substrate. In studied nanostructures maximal Ge content in the nanoislands may reach about 40 at.%.

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      Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source. At low injection currents, the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher currents. The second-order correlation function of the diode displays anti-bunching under a continuous drive current. Single-photon emission is stimulated by subnanosecond voltage pulses. These results suggest that semiconductor technology can be used to mass-produce a single-photon source for applications in quantum information technology.
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        Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes

        Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric pressure and 600 degrees Celsius has previously been shown to produce distinct families of smaller (up to 6 nanometers high) and larger (all approximately 15 nanometers high) nanocrystals. Under ultrahigh-vacuum conditions, physical vapor deposition at approximately the same substrate temperature and growth rate produced a similar bimodal size distribution. In situ scanning tunneling microscopy revealed that the smaller square-based pyramids transform abruptly during growth to significantly larger multifaceted domes, and that few structures with intermediate size and shape remain. Both nanocrystal shapes have size-dependent energy minima that result from the interplay between strain relaxation at the facets and stress concentration at the edges. A thermodynamic model similar to a phase transition accounts for this abrupt morphology change.
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          Coherent manipulation of single spins in semiconductors.

          During the past few years, researchers have gained unprecedented control over spins in the solid state. What was considered almost impossible a decade ago, in both conceptual and practical terms, is now a reality: single spins can be isolated, initialized, coherently manipulated and read out using both electrical and optical techniques. Progress has been made towards full control of the quantum states of single and coupled spins in a variety of semiconductors and nanostructures, and towards understanding the mechanisms through which spins lose coherence in these systems. These abilities will allow pioneering investigations of fundamental quantum-mechanical processes and provide pathways towards applications in quantum information processing.
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            Author and article information

            Affiliations
            Institute of Semiconductor Physics, NASU, Pr. Nauky 41, Kyiv, 03028 Ukraine
            Contributors
            s.s.ponomaryov@gmail.com
            yukhym@isp.kiev.ua
            plyt@isp.kiev.ua
            valakh@isp.kiev.ua
            Journal
            Nanoscale Res Lett
            Nanoscale Res Lett
            Nanoscale Research Letters
            Springer US (New York )
            1931-7573
            1556-276X
            24 February 2016
            24 February 2016
            2016
            : 11
            26909783
            4766170
            1308
            10.1186/s11671-016-1308-x
            © Ponomaryov et al. 2016

            Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License ( http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

            Categories
            Nano Express
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            © The Author(s) 2016

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