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      The redistribution of implanted dopants after metal‐silicide formation

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      Journal of Applied Physics
      AIP Publishing

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          Solid Solubilities of Impurity Elements in Germanium and Silicon*

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            Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92,

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              First phase nucleation in silicon–transition‐metal planar interfaces

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                December 1978
                December 1978
                : 49
                : 12
                : 5827-5834
                Article
                10.1063/1.324599
                9ad80855-6ac7-47f9-bf23-fcbcff2e9b94
                © 1978
                History

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