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      Maximized electron interactions at the magic angle in twisted bilayer graphene

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          Abstract

          The electronic properties of heterostructures of atomically thin van der Waals crystals can be modified substantially by moiré superlattice potentials from an interlayer twist between crystals1,2. Moiré tuning of the band structure has led to the recent discovery of superconductivity3,4 and correlated insulating phases5 in twisted bilayer graphene (TBG) near the 'magic angle' of twist of about 1.1 degrees, with a phase diagram reminiscent of high-transition-temperature superconductors. Here we directly map the atomic-scale structural and electronic properties of TBG near the magic angle using scanning tunnelling microscopy and spectroscopy. We observe two distinct van Hove singularities (VHSs) in the local density of states around the magic angle, with an energy separation of 57 millielectronvolts that drops to 40 millielectronvolts with high electron/hole doping. Unexpectedly, the VHS energy separation continues to decrease with decreasing twist angle, with a lowest value of 7 to 13 millielectronvolts at a magic angle of 0.79 degrees. More crucial to the correlated behaviour of this material, we find that at the magic angle, the ratio of the Coulomb interaction to the bandwidth of each individual VHS (U/t) is maximized, which is optimal for electronic Cooper pairing mechanisms. When doped near the half-moiré-band filling, a correlation-induced gap splits the conduction VHS with a maximum size of 6.5 millielectronvolts at 1.15 degrees, dropping to 4 millielectronvolts at 0.79 degrees. We capture the doping-dependent and angle-dependent spectroscopy results using a Hartree-Fock model, which allows us to extract the on-site and nearest-neighbour Coulomb interactions. This analysis yields a U/t of order unity indicating that magic-angle TBG is moderately correlated. In addition, scanning tunnelling spectroscopy maps reveal an energy- and doping-dependent three-fold rotational-symmetry breaking of the local density of states in TBG, with the strongest symmetry breaking near the Fermi level and further enhanced when doped to the correlated gap regime. This indicates the presence of a strong electronic nematic susceptibility or even nematic order in TBG in regions of the phase diagram where superconductivity is observed.

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          Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands

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            Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

            Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) cannot be turned off effectively due to the absence of a band gap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a band gap up to a few hundred millielectronvolts can be created by the perpendicular E-field in bilayer graphenes. Although previous carrier transport measurements in bilayer graphene transistors did indicate a gate-induced insulating state at temperatures below 1 K, the electrical (or transport) band gap was estimated to be a few millielectronvolts, and the room temperature on/off current ratio in bilayer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively, in our dual-gate bilayer graphene FETs. We also measured an electrical band gap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V nm(-1), respectively. This demonstration reveals the great potential of bilayer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.
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              Is Open Access

              Unconventional Superconductivity and Density Waves in Twisted Bilayer Graphene

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                Author and article information

                Journal
                Nature
                Nature
                Springer Science and Business Media LLC
                0028-0836
                1476-4687
                August 2019
                July 31 2019
                August 2019
                : 572
                : 7767
                : 95-100
                Article
                10.1038/s41586-019-1431-9
                31367030
                9b2dae35-dd5c-48d6-aa4c-e122831d8392
                © 2019

                http://www.springer.com/tdm

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