ScienceOpen:
research and publishing network
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
My ScienceOpen
Sign in
Register
Dashboard
Blog
About
Search
Advanced search
My ScienceOpen
Sign in
Register
Dashboard
Search
Search
Advanced search
For Publishers
Discovery
Metadata
Peer review
Hosting
Publishing
For Researchers
Join
Publish
Review
Collect
Blog
About
3
views
9
references
Top references
cited by
12
Cite as...
0 reviews
Review
0
comments
Comment
0
recommends
+1
Recommend
0
collections
Add to
0
shares
Share
Twitter
Sina Weibo
Facebook
Email
3,688
similar
All similar
Record
: found
Abstract
: not found
Article
: not found
Metal‐insulator semiconductor Schottky‐barrier solar cells fabricated on InP
Author(s):
K. Kamimura
,
T. Suzuki
,
A. Kunioka
Publication date
Created:
February 15 1981
Publication date
(Print):
February 15 1981
Journal:
Applied Physics Letters
Publisher:
AIP Publishing
Read this article at
ScienceOpen
Publisher
Review
Review article
Invite someone to review
Bookmark
Cite as...
There is no author summary for this article yet. Authors can add summaries to their articles on ScienceOpen to make them more accessible to a non-specialist audience.
Related collections
Silicon thin film solar cells
Most cited references
9
Record
: found
Abstract
: not found
Article
: not found
Electrical characteristics of GaAs MIS Schottky diodes
R.J. Gutmann
,
J.M. Borrego
,
S. Ashok
(1979)
0
comments
Cited
28
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
n‐indium tin oxide/p‐indium phosphide solar cells
K Bachmann
,
F. A. Thiel
,
E. Spencer
…
(1977)
0
comments
Cited
24
times
– based on
0
reviews
Review now
Bookmark
Record
: found
Abstract
: not found
Article
: not found
MIS solar cells: A review
D.L. Pulfrey
(1978)
0
comments
Cited
24
times
– based on
0
reviews
Review now
Bookmark
All references
Author and article information
Journal
Title:
Applied Physics Letters
Abbreviated Title:
Appl. Phys. Lett.
Publisher:
AIP Publishing
ISSN (Print):
0003-6951
ISSN (Electronic):
1077-3118
Publication date Created:
February 15 1981
Publication date (Print):
February 15 1981
Volume
: 38
Issue
: 4
Pages
: 259-261
Article
DOI:
10.1063/1.92336
SO-VID:
9b54fd6c-5a8f-47aa-8503-e7dcdd335829
Copyright ©
© 1981
History
Data availability:
Comments
Comment on this article
Sign in to comment
scite_
Similar content
3,688
Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 $\mu$m
Authors:
Baile Chen
,
W. Y. Jiang
,
Jinrong Yuan
…
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
Authors:
K. Ikeda
,
S. Nakaharai
,
T Tezuka
…
The high-speed ultraviolet photodetector of ZnO nanowire Schottky barrier based on the triboelectric-nanogenerator-powered surface-ionic-gate
Authors:
Feng Xia Yang
,
Mingli Zheng
,
Lei Zhao
…
See all similar
Cited by
12
High conversion efficiency and high radiation resistance InP homojunction solar cells
Authors:
Masafumi Yamaguchi
,
Chikao Uemura
,
Akio Yamamoto
Bulk and surface effects of heat treatment ofp‐type InP crystals
Authors:
Richard Bube
,
C‐C. Daniel Wong
A study of Schottky contacts on indium phosphide
Authors:
G. Robinson
,
E. Hökelek
See all cited by
Most referenced authors
48
T. Suzuki
T. SUZUKI
T. Suzuki
See all reference authors