Weak interaction between germanene and GaAs(0001) by H intercalation: A
  route to exfoliation

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Abstract

The epitaxial growth of germanene on semiconducting GaAs(0001) substrate is studied using \(ab\)-\(initio\) calculations. The interaction of the germanene is found to be minimum with the substrate. Our obtained results strongly indicate that it is possible to take off germanene from the substrate to make it free standing. We demonstrate a methods to achieve this aim. We also address the electronic structure of germanene on GaAs(0001) substrate and found to be the Dirac cone shift above the Fermi level with the spltting of 160 meV. Forthermore, we calculate the band structure of the free standing germanene with and without substrate and found band gap of 24 meV due to the intrinsic spin orbit coupling.

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Is Open Access

The electronic properties of graphene

K. S. Novoselov, A. K. Geim, A. H. Castro Neto … (2007)

This article reviews the basic theoretical aspects of graphene, a one atom thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. We show that the Dirac electrons behave in unusual ways in tunneling, confinement, and integer quantum Hall effect. We discuss the electronic properties of graphene stacks and show that they vary with stacking order and number of layers. Edge (surface) states in graphene are strongly dependent on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. We also discuss how different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.