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      Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

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          Abstract

          Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices, and even to superconductivity. Among them, superconductivity is the least studied property in TMDs due to methodological difficulty accessing it in different TMD species. Here, we report the systematic study of superconductivity in MoSe 2, MoTe 2 and WS 2 by ionic gating in different regimes. Electrostatic gating using ionic liquid was able to induce superconductivity in MoSe 2 but not in MoTe 2 because of inefficient electron accumulation limited by electronic band alignment. Alternative gating using KClO 4/polyethylene glycol enabled a crossover from surface doping to bulk doping, which induced superconductivities in MoTe 2 and WS 2 electrochemically. These new varieties greatly enriched the TMD superconductor families and unveiled critical methodology to expand the capability of ionic gating to other materials.

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          Electric Field Effect in Atomically Thin Carbon Films

          We report a naturally-occurring two-dimensional material (graphene that can be viewed as a gigantic flat fullerene molecule, describe its electronic properties and demonstrate all-metallic field-effect transistor, which uniquely exhibits ballistic transport at submicron distances even at room temperature.
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            Two Dimensional Atomic Crystals

            We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals, including single layers of boron nitride, graphite, several dichalcogenides and complex oxides. These atomically-thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality and are continuous on a macroscopic scale.
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              Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

              We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photo-induced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multi-valley materials with strong spin-orbit coupling and inversion symmetry breaking.
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                Author and article information

                Journal
                Sci Rep
                Sci Rep
                Scientific Reports
                Nature Publishing Group
                2045-2322
                03 August 2015
                2015
                : 5
                : 12534
                Affiliations
                [1 ]Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
                [2 ]Zernike Institute for Advanced Materials, University of Groningen , The Netherlands
                [3 ]Center for Emergent Matter Science, RIKEN , Hirosawa 2-1, Wako 351-0198, Japan
                Author notes
                Article
                srep12534
                10.1038/srep12534
                4522664
                26235962
                9dce705b-edad-46b9-b9c8-47fd47279ac2
                Copyright © 2015, Macmillan Publishers Limited

                This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission f+rom the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

                History
                : 12 February 2015
                : 02 July 2015
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