Observation of topological valley transport of sound in sonic crystals

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Abstract

Valley pseudospin, labeling quantum states of energy extrema in momentum space, is attracting tremendous attention1-13 because of its potential in constructing new carrier of information. Compared with the non-topological bulk valley transport realized soon after predictions1-5, the topological valley transport in domain walls6-13 is extremely challenging owing to the inter-valley scattering inevitably induced by atomic scale imperfectness, until the recent electronic signature observed in bilayer graphene12,13. Here we report the first experimental observation of topological valley transport of sound in sonic crystals. The macroscopic nature of sonic crystals permits the flexible and accurate design of domain walls. In addition to a direct visualization of the valley-selective edge modes through spatial scanning of sound field, reflection immunity is observed in sharply curved interfaces. The topologically protected interface transport of sound, strikingly different from that in traditional sound waveguides14,15, may serve as the basis of designing devices with unconventional functions.

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The Valley Hall Effect in MoS2 Transistors

Kathryn McGill, Kin Fai Mak, Paul McEuen … (2014)

Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose sign depends on the valley index, but to date this effect has not been observed. Here we report the first observation of this new valley Hall effect (VHE). Monolayer MoS2 transistors are illuminated by circularly polarized light which preferentially excites electrons into a specific valley, and a finite anomalous Hall voltage is observed whose sign is controlled by the helicity of the light. Its magnitude is consistent with theoretical predictions of the VHE, and no anomalous Hall effect is observed in bilayer devices due to the restoration of crystal inversion symmetry. Our observation of the VHE opens up new possibilities for using the valley DOF as an information carrier in next-generation electronics and optoelectronics.

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Valley contrasting physics in graphene: magnetic moment and topological transport

Qian Niu, Di Xiao, Wang Yao (2007)

We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to generate and detect valley polarization by magnetic and electric means, forming the basis for the so-called valley-tronics applications.

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Valley filter and valley valve in graphene

Adam Rycerz, C Beenakker, J. Tworzydlo (2006)

It is known that the lowest propagating mode in a narrow ballistic ribbon of graphene may lack the twofold valley degeneracy of higher modes. Depending on the crystallographic orientation of the ribbon axis, the lowest mode mixes both valleys or lies predominantly in a single valley (chosen by the direction of propagation). We show, using a tight-binding model calculation, that a nonequilibrium valley polarization can be realized in a sheet of graphene, upon injection of current through a ballistic point contact with zigzag edges. The polarity can be inverted by local application of a gate voltage to the point contact region. Two valley filters in series may function as an electrostatically controlled ``valley valve'', representing a zero-magnetic-field counterpart to the familiar spin valve.