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Temperature persistent bistability and threshold switching in a single barrier heterostructure hot‐electron diode
Author(s):
R. Stasch
,
R. Hey
,
M. Asche
,
A. Wacker
,
E. Schöll
Publication date
Created:
September 15 1996
Publication date
(Print):
September 15 1996
Journal:
Journal of Applied Physics
Publisher:
AIP Publishing
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Most cited references
10
Record
: found
Abstract
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Criteria for stability in bistable electrical devices with S‐ or Z‐shaped current voltage characteristic
A Wacker
,
E. Schöll
(1995)
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New ultrafast switching mechanism in semiconductor heterostructures
K. Hess
,
J J Coleman
,
M. A. Emanuel
…
(1986)
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Theoretical and experimental analysis of the switching mechanism in heterostructure hot‐electron diodes
K. Hess
,
J M Higman
,
M. A. Emanuel
…
(1987)
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Author and article information
Journal
Title:
Journal of Applied Physics
Abbreviated Title:
Journal of Applied Physics
Publisher:
AIP Publishing
ISSN (Print):
0021-8979
ISSN (Electronic):
1089-7550
Publication date Created:
September 15 1996
Publication date (Print):
September 15 1996
Volume
: 80
Issue
: 6
Pages
: 3376-3380
Article
DOI:
10.1063/1.363251
SO-VID:
9ef377e3-e664-4dc2-b0dd-c675f569a3f6
Copyright ©
© 1996
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