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      Temperature persistent bistability and threshold switching in a single barrier heterostructure hot‐electron diode

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      Journal of Applied Physics
      AIP Publishing

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          Criteria for stability in bistable electrical devices with S‐ or Z‐shaped current voltage characteristic

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            New ultrafast switching mechanism in semiconductor heterostructures

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              Theoretical and experimental analysis of the switching mechanism in heterostructure hot‐electron diodes

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                September 15 1996
                September 15 1996
                : 80
                : 6
                : 3376-3380
                Article
                10.1063/1.363251
                9ef377e3-e664-4dc2-b0dd-c675f569a3f6
                © 1996
                History

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