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      Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio

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      Journal of Applied Physics
      AIP Publishing

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          Band Structure and Electron Transport of GaAs

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            The Theory of Electronic Conduction in Polar Semi-Conductors

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              Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K

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                Author and article information

                Journal
                Journal of Applied Physics
                Journal of Applied Physics
                AIP Publishing
                0021-8979
                1089-7550
                February 1979
                February 1979
                : 50
                : 2
                : 899-908
                Article
                10.1063/1.326008
                9f0c7ede-fcb0-4028-a8d7-53c792e614b2
                © 1979
                History

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