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      • Record: found
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      Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures

      Author(s): ,
      Publication date Created:
      Publication date (Print):
      Journal: Applied Physics Letters
      Publisher: AIP Publishing

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          Effective mass and intrinsic concentration in silicon

          H.D. Barber (1967)
          Article 0 comments Cited 93 times – based on 0 reviews     Review now
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            Surface recombination in semiconductors

            D.J. Fitzgerald, A.S. Grove (1968)
            Article 0 comments Cited 45 times – based on 0 reviews     Review now
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              On the determination of minority carrier lifetime from the transient response of an MOS capacitor

              F.P. Heiman (1967)
              Article 0 comments Cited 41 times – based on 0 reviews     Review now
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                Author and article information

                Journal
                Title: Applied Physics Letters
                Abbreviated Title: Appl. Phys. Lett.
                Publisher: AIP Publishing
                ISSN (Print): 0003-6951
                ISSN (Electronic): 1077-3118
                Publication date Created: November 15 1978
                Publication date (Print): November 15 1978
                Volume: 33
                Issue: 10
                Pages: 890-892
                Article
                DOI: 10.1063/1.90205
                SO-VID: 9f17a920-9e62-4a9e-93cb-3a34852b195c
                Copyright © © 1978
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