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Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys
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Most cited references16
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Carrier mobilities in silicon empirically related to doping and field
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Physics and applications of Ge<inf>x</inf>Si<inf>1-x</inf>/Si strained-layer heterostructures
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Electron and hole mobilities in silicon as a function of concentration and temperature
J.R. Hauser, N.D. Arora, D.J. Roulston (1982)