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      Modulators for Terahertz Communication: The Current State of the Art

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          Abstract

          With the increase of communication frequency, terahertz (THz) communication technology has been an important research field; particularly the terahertz modulator is becoming one of the core devices in THz communication system. The modulation performance of a THz communication system depends on the characterization of THz modulator. THz modulators based on different principles and materials have been studied and developed. However, they are still on the way to practical application due to low modulation speed, narrow bandwidth, and insufficient modulation depth. Therefore, we review the research progress of THz modulator in recent years and evaluate devices critically and comprehensively. We focus on the working principles such as electric, optical, optoelectrical, thermal, magnetic, programmable metamaterials and nonlinear modulation methods for THz wave with semiconductors, metamaterials, and 2D materials (such as graphene, molybdenum disulfide, and tungsten disulfide). Furthermore, we propose a guiding rule to select appropriate materials and modulation methods for specific applications in THz communication.

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          The Band Theory of Graphite

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            Epitaxial BiFeO3 multiferroic thin film heterostructures.

            Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
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              Active terahertz metamaterial devices.

              The development of artificially structured electromagnetic materials, termed metamaterials, has led to the realization of phenomena that cannot be obtained with natural materials. This is especially important for the technologically relevant terahertz (1 THz = 10(12) Hz) frequency regime; many materials inherently do not respond to THz radiation, and the tools that are necessary to construct devices operating within this range-sources, lenses, switches, modulators and detectors-largely do not exist. Considerable efforts are underway to fill this 'THz gap' in view of the useful potential applications of THz radiation. Moderate progress has been made in THz generation and detection; THz quantum cascade lasers are a recent example. However, techniques to control and manipulate THz waves are lagging behind. Here we demonstrate an active metamaterial device capable of efficient real-time control and manipulation of THz radiation. The device consists of an array of gold electric resonator elements (the metamaterial) fabricated on a semiconductor substrate. The metamaterial array and substrate together effectively form a Schottky diode, which enables modulation of THz transmission by 50 per cent, an order of magnitude improvement over existing devices.
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                Author and article information

                Contributors
                Journal
                Res (Wash D C)
                Res (Wash D C)
                RESEARCH
                Research : a Science Partner Journal
                AAAS
                2639-5274
                2019
                29 May 2019
                : 2019
                : 6482975
                Affiliations
                1College of Science, Minzu University of China, Beijing 100081, China
                2School of Information Engineering, Minzu University of China, Beijing 100081, China
                3State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
                4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
                Article
                10.34133/2019/6482975
                6750090
                31549075
                a0496421-ed31-4b4e-8863-d05613b22e06
                Copyright © 2019 Z. T. Ma et al.

                Exclusive licensee Science and Technology Review Publishing House. Distributed under a Creative Commons Attribution License (CC BY 4.0).

                History
                : 5 November 2018
                : 18 March 2019
                Funding
                Funded by: National Key R. & D. Plan of China
                Award ID: 2016YFB0402700
                Award ID: 2017YFB0405400
                Funded by: National Natural Science Foundation of China
                Award ID: 61774175
                Award ID: 61674146
                Award ID: 61875140
                Award ID: 61634006
                Funded by: Opened Fund of the State Key Laboratory of Integrated Optoelectronics
                Award ID: IOSKL2017KF12
                Funded by: Key Program of Natural Science Foundation of Beijing
                Award ID: 4181001
                Funded by: Leading Project of Youth Academic Team
                Award ID: 317201929
                Funded by: Young and Middle-Aged Talents Training Program of State Ethnic Affairs Commission
                Categories
                Review Article

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