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# Micrometer-scale ballistic transport in encapsulated graphene at room temperature

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### Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

### Most cited references5

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### Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

(2007)
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
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### Temperature dependent transport in suspended graphene

(2008)
The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K 0.5*10^11 cm^-2, the resistivity increases with increasing T and is linear above 50K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ~120,000 cm^2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10^8 cm^-2.
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### Limits on electron quality in suspended graphene due to flexural phonons

(2010)
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $$T \gtrsim 10\,\,$$K, and the resistivity increases quadratically with $$T$$. Flexural phonons limit the intrinsic mobility down to a few $$\text{m}^2/\text{Vs}$$ at room $$T$$. Their effect can be eliminated by applying strain or placing graphene on a substrate.
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### Author and article information

###### Journal
23 March 2011
2011-06-10
###### Article
10.1021/nl200758b
21574627
1103.4510