Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Lee, K. Y.; Becker, C.; Muske, M.; Ruske, F.; Gall, S.; Rech, B.; Berginski, M.; Hüpkes, Jürgen

doi:10.1063/1.2824456

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Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Author(s): K. Y. Lee , C. Becker , M. Muske , F. Ruske , S. Gall , B. Rech , M. Berginski , J. Hüpkes

Publication date Created: December 10 2007

Publication date (Print): December 10 2007

Journal: Applied Physics Letters

Publisher: AIP Publishing

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TCO and light trapping in silicon thin film solar cells

Joachim. Müller, Bernd Rech, Jiri Springer … (2004)

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Resistivity of polycrystalline zinc oxide films: current status and physical limit

K Ellmer (2001)

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Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

C. Agashe, O. Kluth, J. Hüpkes … (2004)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: December 10 2007

Publication date (Print): December 10 2007

Volume: 91

Issue: 24

Page: 241911

Article

DOI: 10.1063/1.2824456

SO-VID: a1db8668-ba5f-4267-ab90-dc1e84f935c8

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Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

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Abstract

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Silicon thin film solar cells

Most cited references 18

TCO and light trapping in silicon thin film solar cells

Resistivity of polycrystalline zinc oxide films: current status and physical limit

Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films

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