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      Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

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          Most cited references 9

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          Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films

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            Al induced crystallization ofa‐Si

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              Pd induced lateral crystallization of amorphous Si thin films

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                Author and article information

                Journal
                IEEE Electron Device Letters
                IEEE Electron Device Lett.
                Institute of Electrical and Electronics Engineers (IEEE)
                0741-3106
                1558-0563
                April 1996
                April 1996
                : 17
                : 4
                : 160-162
                Article
                10.1109/55.485160
                © 1996
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