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      Band edge identification and carrier dynamics of CVD MoS2 monolayer measured by broadband Femtosecond Transient Absorption Spectroscopy

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          Abstract

          Carrier dynamics in monolayer MoS2 have been investigated using broadband femtosecond transient absorption spectroscopy (FTAS). A tunable pump pulse was used while a broadband probe pulse revealed ground and excited state carrier dynamics. Interestingly, for pump wavelengths both resonant and non-resonant with the A and B excitons, we observe a ground state bleach around 2.9 eV, with decay components similar to A and B. We associate this bleach with the quasi-particle direct gap. Comparison of mono-, few-, and multi-layer regions is consistent with this identification, indicating a binding energy for the exciton states of ~1 eV.

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          Journal
          1512.04461

          Nanophysics
          Nanophysics

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