Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

Gleason, D. A.; Galiano, K; Brown, J L; Hilton, A M; Ringel, S. A.; Arehart, A. R.; Heller, E. R.; Dorsey, D. L.; Pelz, J. P.

doi:10.1063/1.5079745

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Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

Author(s): D. A. Gleason ¹ , K. Galiano ¹ , J. L. Brown ² , A. M. Hilton ² , S. A. Ringel ³ , A. R. Arehart ³ , E. R. Heller ⁴ , D. L. Dorsey ⁴ , J. P. Pelz ¹

Publication date Created: February 04 2019

Publication date (Print): February 04 2019

Journal: Applied Physics Letters

Publisher: AIP Publishing

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Most cited references 24

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Deep-level optical spectroscopy in GaAs

G. Vincent, D Bois, A. Chantre (1981)

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs

J.A. Roussos, W. Kruppa, Doewon Park … (2001)

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A Survey of Wide Bandgap Power Semiconductor Devices

José María Millán, Xavier Perpiñà, Amador Pérez-Tomás … (2014)

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Journal

Title: Applied Physics Letters

Abbreviated Title: Appl. Phys. Lett.

Publisher: AIP Publishing

ISSN (Print): 0003-6951

ISSN (Electronic): 1077-3118

Publication date Created: February 04 2019

Publication date (Print): February 04 2019

Volume: 114

Issue: 5

Page: 053510

Affiliations

[1 ]Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

[2 ]KBRwyle, Dayton, Ohio 45431, USA

[3 ]Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

[4 ]Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA

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DOI: 10.1063/1.5079745

SO-VID: a45a3c7e-cac9-4330-b681-02a63db4561a

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Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing

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Most cited references 24

Deep-level optical spectroscopy in GaAs

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

A Survey of Wide Bandgap Power Semiconductor Devices

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